对温度及其对SOT-MRAM设备的影响进行了全面研究
Tomáš Hadámek1, Nils Petter Jørstad1, Roberto Lacerda de Orio2
1Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic, Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, A-1040 Wien, Austria.
Micromachines
|August 26, 2023
概括
温度显著影响旋转轨道扭矩 (SOT) 磁还原性随机访问存储器 (MRAM) 切换. 温度升高降低了SOT的临界电压,并引入了化时间,这种现象在恒温模型中并未见到.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
背景情况:
- 旋转轨道扭矩 (SOT) 是下一代内存设备 (如MRAM) 中高效磁化切换的关键机制.
- 了解温度影响对于可靠的MRAM操作至关重要,因为设备性能可能取决于温度.
研究的目的:
- 研究温度动态对SOT-MRAM切换行为的影响.
- 探索温度缩放如何影响磁化参数和切换特性.
主要方法:
- 开发了一个完全三维的数值模型,将磁化,电荷,旋转和温度动力学结合起来.
- 通过旋转霍尔效应将旋转电流纳入,并且磁化参数与温度进行缩放.
- 进行了数值实验来分析温度动态和切换现象.
主要成果:
- 温度动态表现出多个时间尺度,包括一个快速的初始上升,其次是较慢的上升.
- 温度的逐渐上升导致切换的化时间,这种时间在恒温模拟中是不存在的.
- 升高的工作温度显著降低了非场SOT-MRAM的关键SOT开关电压.
- 外场辅助切换显示了临界SOT电压在应用MTJ电压时的抛物线下降.
结论:
- 温度动态在SOT-MRAM切换中起着至关重要的作用,引入化时间并减少切换能量.
- 开发的模型准确地捕捉了实验观察到的现象,强调了考虑热效应的重要性.
- 这些发现为优化SOT-MRAM设备设计和性能提供了宝贵的见解.
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