相关实验视频

Updated: Jul 18, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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在使用原子层蚀刻和高功率设备应用的门场板用于正常关闭的GaN入门MIS-HEMT中提高性能和故障电压

An-Chen Liu1, Po-Tsung Tu1,2, Hsin-Chu Chen3

  • 1Department of Photonics, Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.

Micromachines
|August 26, 2023
PubMed
概括

这项研究介绍了原子层蚀刻 (ALE) 对于金属绝缘体半导体高电子流动性晶体管 (MIS-HEMT) 中的低损伤门插入. 该技术可实现高电流密度,故障电压和低电阻,用于先进的电子应用.

关键词:
这是MIS-HEMTT.原子层蚀刻 (ALE) 是一种原子层蚀刻.门的表面粗度 门的表面粗度

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