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金属诱导的陷状态:界面和边界陷在HfO中的作用

Huy-Binh Do¹, Quang-Ho Luc², Phuong V Pham³

¹Faculty of Applied Science, Ho Chi Minh City University of Technology and Education, 01 Vo Van Ngan Street, Ho Chi Minh City 700000, Vietnam.

|August 26, 2023

概括

选择合适的门金属对于减少HfO2/InGaAs接口缺陷至关重要. (Mo) 门金属减少了接口和边界陷,从而提高了设备的性能.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
设备工程设备工程

背景情况:

像氧化 (HfO2) 这样的高k介电材料对于先进的半导体设备是必不可少的.
了解介电/半导体接口上的缺陷对于设备的性能和可靠性至关重要.
基于InGaAs的设备提供了卓越的电子流动性,但在接口质量方面面临着挑战.

研究的目的:

调查不同门金属工作功能的影响,在批量HfO2和HfO2/InGaAs接口上的缺陷产生.
为了识别最小化接口和边界陷的门金属,以改善InGaAs设备特性.
为基于InGaAs的高k设备选择最佳门金属建立一个系统的方法.

主要方法:

用电容电压 (C-V) 测量来描述设备的电性能.
技术计算机辅助设计 (TCAD) 模拟被用于模拟设备行为和缺陷影响.
用X射线光电子光谱 (XPS) 来进行表面和接口分析.
应用了海曼函数来分析边界陷密度和寿命.

主要成果:

由于Ti/HfO2接口的氧化, (Ti) 门金属导致接口和边界陷的密度最高.
(Mo) 门金属形成了一个稳定的接口,产生了观察到的陷密度最低的陷.
实现了接受型 (1.27 × 10^11 eV−1cm−2) 和捐赠型 (3.81 × 10^11 eV−1cm−2) 接口陷密度 (Dit) 的创纪录的低值.
边界陷密度和寿命显著影响C-V曲线中的歇斯底里.

结论:

门金属的工作功能对HfO2/InGaAs结构中的缺陷形成产生了重大影响.
(Mo) 被确定为一个有前途的门金属,用于在InGaAs设备中实现卓越的接口质量.
这些发现为选择门金属提供了必要的指导,以优化基于InGaAs的半导体设备.

关键词:

Hf 4f 的峰值是什么类似接受者和类似捐赠者的陷.边境陷边境陷边境陷在HfO2中存在缺陷.电子带结构电子带结构接口陷接口陷价值带的最大值为

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