相关实验视频

Updated: Jul 18, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

一个具有两个操作状态的新前向偏差PIN马赫-泽恩德调制器

Hang Yu^1,2, Donghe Tu^1,2, Xingrui Huang^1,2

¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

|August 26, 2023

概括

本研究介绍了一种新型的马赫-泽恩德调制器 (MZM),具有两种可切换的操作状态,可实现高效率和高速度. 该设备实现了7GHz的电光带宽和15Gbps的数据速率,适用于先进的光学系统.

科学领域:

光子学和光电学和光电子学.
集成光学集成光学集成光学
半导体设备半导体设备

背景情况:

马赫-泽恩德调制器 (MZM) 是光通信系统中至关重要的组件.
在单一设备中实现高调制效率和广泛的电光 (E-O) 带宽仍然是一个挑战.
光学为集成光学设备提供了一个可扩展的平台.

研究的目的:

为了证明一种新的向偏向的正与内在负 (PIN) 马赫-泽恩德调制器 (MZM).
在单个MZM中实现可切换的高效率和高速运行状态.
将PIN相变器与被动电阻和电容 (RC) 均等器集成,以提高性能.

主要方法:

PIN-MZM的制造,其中包含一个PIN相变器和一个集成的RC等分器 (PIN-RC).
通过改变电信号加载位置来切换操作状态.
插入损失,调制效率和EO带宽的表征.

主要成果:

制造的调制器具有低插入损失 (1.29 dB) 和紧的设计 (500μm相位变速器长度).
实现了两个不同的操作状态,调制效率为0.0088V·cm (高效率) 和1.43V·cm (高速).
相应的3dB E-O带宽分别为200MHz和7GHz,并证明了成功的15GbpsNRZ调制.

结论:

开发的PIN-MZM提供了功能灵活性,可切换高效率和高速模式.
集成的PIN-RC等分器有效地扩展了EO带宽,同时保持了调制效率.
调制器的性能特性使其适用于光学交换机阵列和模拟信号处理中的应用.

关键词:

这是一个光学调制器光学调制器.被动均等器是一种被动均等器.光子学是一种光子学.两个运行状态两个运行状态.

更多相关视频

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

相关概念视频

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

Diode: Forward bias

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...

MOSFET: Depletion Mode

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...

Biasing of FET

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...