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Updated: Jul 18, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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单次事件扰动研究22纳米完全耗尽的在绝缘体上的静态随机访问存储器,具有电荷共享效应

Chenyu Yin1, Tianzhi Gao1, Hao Wei1

  • 1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|August 26, 2023
PubMed
概括

在6T-SRAM中,单一事件效应在22nm的FDSOI过程中被模拟. 电荷共享和双极放大加剧了这些影响,降低了颠覆值和临界电荷,较小的粒子造成了更大的影响.

关键词:
3D设备模拟 3D设备模拟这是一个SRAM.双极放大效应的双极放大效应收费共享效应是指收费共享的效应.完全耗尽的在绝缘体上 (FDSOI)单一事件的颠覆 (SEU)

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