在eGaN HEMT电源设备中的动态功率损失的分析模型
Jianming Lei1, Yangyi Liu1, Zhanmin Yang1
1The School of Electrical Engineering, Nanjing Vocational University of Industry Technology, Nanjing 210023, China.
本研究介绍了一种改进的分析模型,用于增强模式AlGaN/GaN高电子移动性晶体管功率器件 (eGaN HEMTs) 的动态功率损失. 该模型准确地预测了损失,并提出了无损切换的准共振模式.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
背景情况:
- 动力设备中的动态功率损失对于效率至关重要.
- 现有增强模式AlGaN/GaN高电子移动性晶体管 (eGaN HEMT) 的现有模型需要改进以提高准确性.
- 了解电阻变化和过渡时间对于设备性能至关重要.
研究的目的:
- 开发一个准确的分析模型,用于eGaN HEMTs的动态功率损失.
- 调查影响动态阻力和过渡时间的因素.
- 为提高效率和速度提出一种新的切换策略.
主要方法:
- 精确提取动态启动电阻 (R_on) 使用双二极管隔离 (DDI) 电路到1MHz和600V.
- 在不同的电流模式下 (DCM,CCM) 通过双脉冲电流模式测试 (DPCT) 评估开/关过渡时间.
- 使用外部分流电容 (ESC) 方法对通道电流差异和寄生电容损失进行定性调查.
主要成果:
- 观察并建模了动态R_on的独特增加.
- 对于不同电流传导模式的过渡时间进行了修订.
- 该模型考虑了由于寄生电容造成的损失.
- 计算的动态功率损耗与实验结果有很好的一致性.
结论:
- 增强的分析模型与eGaN HEMTs更兼容.
- 建议采用准共振模式 (QRM) 来实现无损切换和加速切换速度.
- 开发的模型为优化eGaN HEMT性能提供了基础.
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