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Updated: Jul 18, 2025

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过度和不足协调的原子作为无形化中电子和孔陷的来源 (a-Si3N4)

Christoph Wilhelmer1,2, Dominic Waldhoer2, Lukas Cvitkovich2

  • 1Christian Doppler Laboratory for Single-Defect Spectroscopy in Semiconductor Devices, Institute for Microelectronics, TU Wien, 1040 Wien, Austria.

Nanomaterials (Basel, Switzerland)
|August 26, 2023
PubMed
概括

新的研究确定了化薄膜中以前未知的电荷捕获点,这对于充电陷闪存 (CTF) 设备内存至关重要. 这些内在的电子陷解释了CTF设备中的内存效应.

关键词:
无形化的化.闪存记忆 闪存记忆是一种闪存记忆.内在电荷的捕获地点.非辐射的多声波模型.

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