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处理低压解决方案的合CuI薄膜晶体管,具有NOR逻辑和人工突触功能

Xiaomin Gan¹, Wei Dou¹, Wei Hou¹

¹Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Hunan Normal University, Changsha 410081, China.

Nanomaterials (Basel, Switzerland)

|August 26, 2023

概括

低压添加铜化物 (Zn-doped CuI) 薄膜晶体管 (TFT) 使用基托桑介电器显示了性能改进. 这些新型TFT显示了低成本电子和生物传感器的潜力.

科学领域:

材料科学材料科学材料科学
电子工程电子工程
生物物理学的生物物理.

背景情况:

薄膜晶体管 (TFT) 对于电子设备至关重要.
酸铜 (CuI) 是一个有前途的p型半导体材料.
低温制造方法对于具有成本效益的制造是理想的.

研究的目的:

制造和表征低电压Zn-dopedCuI TFT,使用低温的奇多介电.
调查Zn兴奋剂对CuI TFT表现的影响.
探索这些TFT在逻辑操作和生物感知中的潜在应用.

主要方法:

在低温下制造Zn合CuI薄膜和TFT.
使用扫描电子显微镜,X射线衍射和X射线光电子光谱学进行表征.
电气性能评估,包括开/关电流比率,下值摆动和场效应移动性.

主要成果:

与未添加的CuI TFT相比,用Zn添加的CuI TFT显示出更高的开/关电流比率.
实现了1.58 × 10^4的开/关电流比,70 mV/十年的下值摆动,以及0.40 cm^2V^-1s^-1.0 的移动性.
由于基托介电的电气双层效应,证明了低电压操作 (< -2 V).
实现了NOR逻辑操作,并使用TFTs模拟了一个疼痛神经元.

结论:

兴奋剂通过解决铜空缺问题,有效地提高了CuI TFT的性能.
桑介电器使低压操作成为可能,并有助于设备的稳定性.
用Zn合的CuI TFT显示出适用于低成本电子,互补电路和生物传感器的应用的希望.

关键词:

在 NOR 逻辑操作操作中,NOR 是一个逻辑操作.用Zn合的CuI可以使用.人工突触系统是一个人造突触系统.电动双层电动双层低电压低电压的情况.薄膜晶体管薄膜晶体管

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