在具有直流温度测量的A类高频放大器中补偿衰老
Josep Altet1, Xavier Aragones1, Enrique Barajas1
1Electronic Engineering Department, Universitat Politcnica de Catalunya-Barcelona Tech, 08034 Barcelona, Spain.
Sensors (Basel, Switzerland)
|August 26, 2023
概括
本研究介绍了直流温度测量,以监测和抵消因晶体管老化引起的纳米CMOS模拟电路的性能下降. 这种方法有效地恢复了放大器的增益,其中一项程序实现了完全恢复.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
- 可靠性工程可靠性工程
背景情况:
- 在纳米CMOS模拟电路中的晶体管老化会导致性能降低,威胁到可靠性.
- 延长电路运行寿命需要监控和调整设备在老化过程中的偏差.
研究的目的:
- 提出和验证直流温度测量作为监测电路性能恶化的方法.
- 为了证明使用温度读数来自动调整设备偏差并恢复退化电路性能.
主要方法:
- 在高频A级功率放大器和差温传感器附近利用了直流温度测量.
- 实施了两种不同的直流温度测量程序,以跟踪放大器增强降低.
- 基于观察到的温度读数开发了一个自动偏差调整机制.
主要成果:
- 加速老化降低了放大器增益高达50%.
- 恒流温度测量成功跟踪了放大器增强降解.
- 一个程序恢复了放大器增益的原始值,而第二个程序实现了部分恢复.
结论:
- 直流温度测量为监测CMOS模拟电路中晶体管老化效应提供了一种可行的方法.
- 基于温度反的自动偏差调整可以有效地恢复退化的电路性能.
- 提出的方法提高了纳米CMOS模拟电路的运行寿命和可靠性.
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