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在化上监测钻石生长的初始阶段,使用现场光谱圆测量

William Leigh^1,2, Soumen Mandal¹, Jerome A Cuenca¹

¹School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, U.K.

|August 28, 2023

概括

多晶钻石为化 (GaN) 设备提供了出色的热管理. 在现场光谱圆测量监测了化 (AlN) 上的钻石生长,揭示了对接口形成和薄膜凝聚的见解.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
表面科学是一门学科.

背景情况:

多晶钻石的高导热性对于化 (GaN) 设备的热管理至关重要.
与早期生长阶段相关的钻石基质接口上的热屏障阻碍了这种应用.
在GaN和钻石之间使用化 (AlN) 介层.

研究的目的:

用现场光谱圆测量 (SE) 来研究AlN上钻石膜生长的初始阶段.
了解钻石-AlN接口的形成及其对热性质的影响.
为了将现场SE数据与现场表征技术相关联.

主要方法:

微波等离子增强化学蒸汽沉积 (PECVD) 用于钻石生长.
在现场光谱圆测量 (SE) 以实时监测生长.
开发用于SE数据分析的光学模型.
现场拉曼光谱和原子力显微镜 (AFM) 用于证实.

主要成果:

SE成功地监测了AlN上的钻石岛生长的早期阶段.
将凝聚成连续膜的过程通过空隙分数的减少来确定.
在凝聚过程中,sp2碳分量的增加表明了粒粒边界的形成.
通过拉曼光谱和AFM验证了SE衍生的参数.

结论:

在现场SE是一个强大的工具,用于实时监测AlN上的钻石增长.
了解早期生长阶段和凝聚是最小化界面热屏障的关键.
这项研究为优化GaN电子产品中热管理的钻石薄膜提供了洞察力.

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