在没有拓式霍尔效应的情况下,对抗铁磁合的 skyrmions 的稳定和附带控制
Rawana Yagan1, Arash Mousavi Cheghabouri1, Mehmet C Onbasli1,2
1Department of Electrical and Electronics Engineering, Koç University Sarıyer Istanbul 34450 Turkey monbasli@ku.edu.tr.
Nanoscale advances
|August 28, 2023
概括
合成反铁磁合 (SAF) 多层使得高效的 skyrmion 控制没有拓的霍尔效应 (THE). 这些SAF skyrmions表现出明显更高的速度和较低的电流密度,减少了功耗.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 合成反铁磁合 (SAF) 多层提供了一种新的方法来稳定磁性 skyrmions.
- 消除拓式霍尔效应 (THE) 对于高效和稳定的 skyrmion 控制至关重要.
- 了解材料参数和外部场对SAF skyrmion动态的影响仍然是一个公开的挑战.
研究的目的:
- 通过计算和理论证明稳定SAF skyrmions的参数空间.
- 为了研究SAF skyrmions的电流驱动动力学和传播特征.
- 评估在没有TE的 skyrmionics中降低功耗的潜力.
主要方法:
- 对SAF多层系统的计算和理论建模.
- 在不同材料参数 (和磁化,单轴异轴性,Dzyaloshinskii-Moriya相互作用) 下分析斯基米翁平衡和传播.
- 模拟电流驱动动力学和评估能源效率.
主要成果:
- 确定了一大窗口的材料参数稳定SAF skyrmions.
- 电流驱动的SAF skyrmion速度达到大约200m/s,明显超过铁磁系统中的速度.
- 需要的电流密度降低到10^8 A/m^2,比铁磁镜减少了3个数量级.
- 减少的驱动电流导致朱尔加热量减少了6个数量级.
结论:
- 多层SAF提供了一个可行的平台,以提高稳定性和动态性,为无THE的 skyrmionics提供可行的平台.
- 这些发现突出了未来的旋转电子设备显著节省电力的潜力.
- 这项工作为开发先进的SAF接口为高效的基于skyrmion的技术铺平了道路.
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