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吸毒不可吸毒者:混合分子束增长,n型吸毒和使用CaSnO的场效应晶体管₃

Fengdeng Liu¹, Prafful Golani², Tristan K Truttmann¹

¹Department of Chemical Engineering and Materials Science, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, United States.

|August 28, 2023

概括

研究人员成功地使用兰对超宽带间隙半导体斯坦酸 (CaSnO3) 进行了注. 这一突破为使用这种有前途的材料的高压电子设备提供了新的可能性.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
半导体研究半导体研究

背景情况:

土斯坦纳特以宽带间隙和高电子流动性而闻名.
斯坦 (CaSnO3) 拥有这个家族中最大的带隙,使其成为超宽带隙半导体应用的首选候选者.
以前的研究认为CaSnO3被认为是CaSnO3.
不适合使用的undopable.
由于理论上的挑战和失败的兴奋剂尝试.

研究的目的:

为了克服CaSnO3的兴奋剂挑战,并证明其作为功能性半导体的潜力.
为了实现对CaSnO3薄膜的受控n型兴奋剂.
研究杂的CaSnO3的特性及其在电子设备中的应用.

主要方法:

利用杂交分子束表,以吸附控制的增长的纯相,表和固态CaSnO3薄膜.
引入了 (La) 作为n型补充剂.
运用密度函数计算来理解格子扩张及其对导电带的影响.

主要成果:

实现了对CaSnO3的强大且可预测的n型兴奋剂,其自由电子度从3.3 × 10^19 cm^-3到1.6 × 10^20 cm^-3.
在 3.3 × 10^19 cm^-3.3 的载体度下,观察到最大的室温电子流动性为 42 cm^2 V^-1 s^-1.
基于CaSnO3制造的场效应晶体管,在100V时具有较低的关闭状态泄漏率 (<2×10^-5 mA/mm) 和高的开关比率 (>10^6).

结论:

成功证明了CaSnO3的n型兴奋剂,克服了以前的限制.
由于La兴奋剂的观察到的晶格扩张降低了导电带,促进了兴奋剂.
制造的晶体管突显了CaSnO3在高压应用中的潜力,为未来的研究和设备开发开辟了道路.

关键词:

斯坦酸是一种酸.化学兴奋剂化学兴奋剂密度函数计算密度函数计算高压电子产品的高压电子产品混合分子束表 (hMBE) 是一种混合分子束表.金属半导体场效应晶体管 (MESFET) 的使用超宽带间隙 (UWBG) 半导体半导体

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