多源自旋电子设备的接口工程策略通过TMPS黑调制通过TMPS4
Tongtong Wang1, Fangqi Liu1, Sheng Liu2
1College of Science and Key Laboratory for Ferrous Metallurgy, Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, 430081, China. sczhu@wust.edu.cn.
Physical chemistry chemical physics : PCCP
|August 30, 2023
概括
使用新的范德瓦尔斯异构结构的接口工程,特别是具有磁性CrPS4的黑 (BP),可以增强逻辑操作和磁性存储. 这些材料对先进的自旋电子设备具有出色的自旋过和热电特性.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 接口工程提高了使用二维铁磁 (FM) 材料进行逻辑操作和信息存储的性能.
- 范德瓦尔斯 (vdW) 的异构结构为逻辑组件提供了高效的设计策略.
研究的目的:
- 提出和研究两个新的vdW异构结构:黑 (BP) 与TMPS4集成 (TM = Cr,Fe-Mn).
- 探索这些异构结构在先进逻辑设备和磁性信息存储方面的潜力.
主要方法:
- 采用第一原理模拟来分析拟议的异质连接的稳定性,载体流动性和热电性质.
- BP/CrPS4异质连接的电子带结构被专门调节为II型配置.
主要成果:
- 该BP/TMPS4异质连接显示出高稳定性,载体流动性和热电效应.
- BP/CrPS4异质连接显示出II型电子带结构,这对于设备的功能至关重要.
- 基于这些结构的设备显示出显著的旋转西贝克效应 (SSE),完美的旋转过效应 (SFE),高灭绝率 (1347) 和高热磁电阻 (1011).
结论:
- 开发的BP/TMPS4双层是下一代基于旋转的VDW设备的有希望的候选者.
- 这些发现有助于未来发展原子薄磁性信息存储技术.
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