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Updated: Jul 17, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Published on: December 5, 2015

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在捐赠者-接受者异构结构中的二维MoTe2的电荷转移驱动相位过渡

Shiqiang Yu1, Ying Dai1, Baibiao Huang1

  • 1School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.

The journal of physical chemistry letters
|August 30, 2023
PubMed
概括

新的电烯材料Ca2XN2促进了二化 (MoTe2) 的相位过渡到其转移稳定的T'相. 这一发现为合成高质量的T'相MoTe2.2提供了一种新方法.

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Phase Transitions02:31

Phase Transitions

Whether solid, liquid, or gas, a substance's state depends on the order and arrangement of its particles (atoms, molecules, or ions). Particles in the solid pack closely together, generally in a pattern. The particles vibrate about their fixed positions but do not move or squeeze past their neighbors. In liquids, although the particles are closely spaced, they are randomly arranged. The position of the particles are not fixed—that is, they are free to move past their neighbors to...
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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