改进了电阻切换性能,并在NiO/HfO2双层结构中实现了对交换偏差的电控制
Yu Lu1, Yuan Yuan1, Ruobai Liu1
1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China. jdu@nju.edu.cn.
Physical chemistry chemical physics : PCCP
|September 1, 2023
概括
抗铁磁NiO/HfO2双层抑制内存设备中的电阻切换波动. 这种增强为先进的电子产品提供了无成形的操作,更好的稳定性和更好的耐久性.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 纳米技术纳米技术
背景情况:
- 导电丝 (CFs) 类型的电阻开关 (RS) 设备面临不可避免的开关参数波动,限制了它们在电阻随机存储器 (ReRAM) 中的使用.
- 现有的研究努力克服单层设备固有的不稳定性.
研究的目的:
- 为了抑制基于HfO2的设备中的电阻切换波动.
- 改进电阻开关装置的性能指标,包括无成形运行,电压分布,开/关比和耐久性.
- 调查电阻开关的基本机制及其与磁性质的相互作用.
主要方法:
- 制造用于电阻切换应用的NiO/HfO2双层结构.
- 电气性质的表征,包括I-V曲线,设置电压分布和耐久性测试.
- 对导电缩放行为的分析,以确定导电丝的瓶尺寸.
- 在Co-NiO接口上调查交换偏差 (EB) 效应.
主要成果:
- 与单个HfO2设备相比,NiO/HfO2双层证明了无形成的操作,具有更窄的设置电压分布和更好的耐久性.
- 导电缩放分析揭示了双层中较小的尺度参数S0,表明更局部的导电丝瓶.
- 观察到高电阻状态中的不对称I-V曲线和交换偏差的电调制,这表明RS和磁性合之间存在联系.
结论:
- 反铁磁NiO层的集成有效地抑制了基于HfO2的设备中的电阻切换波动.
- 在NiO层中的局部电场和预先存在的导电路径有助于增强RS性能.
- 观察到的电阻切换和交换偏差的共存为设计新型多功能存储器件打开了道路.
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