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Updated: Jul 17, 2025

Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Published on: November 15, 2013

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在Janus MoSH/GaN范德瓦尔斯异构结构中对可控制的接触类型的第一原则研究

Yutao Liu1, Tinghong Gao1

  • 1Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China.

The Journal of chemical physics
|September 1, 2023
PubMed
概括

研究人员探索了Janus MoSH/GaN和MoHS/GaN对低电阻电子接触的异构结构. 对于可调 Schottky 屏障高度和 Ohmic 接触,MoHS/GaN 显示出有前途的承诺,从而推进了 2D 材料设备设计.

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