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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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Updated: Jul 17, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

对于电阻随机访问存储器件的区域选择性原子层沉积.

Il-Kwon Oh^1,2,3, Asir Intisar Khan⁴, Shengjun Qin⁴

¹Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.

ACS applied materials & interfaces

|September 1, 2023

概括

此摘要是机器生成的。

HfO2的区域选择性原子层沉积 (AS-ALD) 改善了电阻随机存储器 (RRAM) 制造. 这种方法通过减少可变性来提高RRAM的可靠性和准确性,为数据存储和神经形态计算的更广泛采用铺平了道路.

关键词:

区域选择性的原子层沉积沉积.数据存储设备的数据存储设备.介电物质是一种介电物质.发光线的限制限制.电阻随机访问存储器电阻随机访问存储器

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Last Updated: Jul 17, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Published on: May 13, 2020

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科学领域:

材料科学材料科学材料科学
电气工程电气工程
纳米技术纳米技术

背景情况:

电阻随机访问存储器 (RRAM) 显示了数据存储和神经形态计算的潜力.
设备的可变性 (循环到循环和设备到设备) 阻碍了RRAM的广泛采用和可制造性.
通过提高结构精度来最大限度地减少丝状随机性是减少RRAM可变性的关键.

研究的目的:

研究HfO2的区域选择性原子层沉积 (AS-ALD),以制造更可靠,更准确的RRAM设备.
为了证明AS-ALD能够在特定电极上创建统一和有选择性的HfO2图案,而无需光电法.

主要方法:

HfO2介电层的区域选择性原子层沉积 (AS-ALD). 介电层.
在SiO2/Si基板上的Pt底电极上使用AS-ALD制造RRAM设备.
与没有AS-ALD的RRAM设备性能 (工作电压范围,电阻状态) 的比较.

主要成果:

在Pt电极上成功证明了HfO2模式的均和选择性ALD,而不是在SiO2/Si基板上.
与控制设备相比,使用AS-ALD制造的RRAM设备表现出明显更窄的操作电压范围 (2.6倍改进) 和更明显的电阻状态.
无论设备尺寸 (1x1,2x2和5x5μm2) 如何,RRAM可靠性都得到了持续的改善.

结论:

HfO2的AS-ALD是一种有效的技术,通过最大限度地减少变化来提高RRAM设备的可靠性和准确性.
经过证明的AS-ALD方法提供了一种无光刻法方法,用于改进RRAM制造.
这项工作鼓励AS-ALD用于其他内存技术,如相变,磁性和铁电式RAM.