E B Olshanetsky1,2, G M Gusev3, A D Levin3

  • 1Institute of Semiconductor Physics, Novosibirsk 630090, Russia.

Physical review letters
|September 1, 2023
PubMed
概括

二维拓绝缘器表现出螺旋边缘状态,但表现出意想不到的导电率偏差. 这项研究揭示了这些波动的多元性,为拓材料的安德森过渡提供了洞察力.

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