取决于层的激子极化性和在少数层黑中暗激子的亮化
Yuchen Lei1, Junwei Ma1, Jiaming Luo1
1State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China.
我们测量了少数层黑 (BP) 中的激子极化性,并发现暗色激子可以变得比电场下的允许过渡更亮,揭示了厚度依赖的效应.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 光物理学的光学物理学
背景情况:
- 激子行为在二维材料中至关重要,但依赖层的激子极化性仍未得到充分研究.
- 黑 (BP) 是一种带隙半导体,具有光电子的潜力.
研究的目的:
- 为了研究少数层黑 (BP) 中的依赖层的刺激子极化性.
- 探索电场对刺激子行为和在BP中的载体选的影响.
主要方法:
- 在双门设备上的频率分辨率光电流测量.
- 对宽带光电频谱进行分析,以探测刺激反应.
- 对少数层 (3至11层) 黑的研究.
主要成果:
- 确定了几层BP的激子极化性,显示了厚度依赖的演变.
- 在更厚的BP样本中揭示了显著的载体查效应.
- 观察到暗刺激子变得比在特定电场下的允许过渡更亮.
- 由于门电场,揭示了对更高指数子带的激发反应.
结论:
- 这项研究阐明了激子演变与样本厚度在少数层BP.
- 证明了明亮暗激子的潜力,为光电子应用开辟了道路.
- 铺平了先进的光电子设备的道路,如调制器,可调光探测器,发射器和激光器使用少数层BP.
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