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在中温度范围内的SnSe纳米片中大热电功率因子的物理学

Anjali Panwar¹, Neeleshwar Sonnathi¹, Subhendra D Mahanti²

¹University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Delhi 110078, India.

Journal of physics. Condensed matter : an Institute of Physics journal

|September 2, 2023

概括

一个强烈的障碍模型解释了锡化 (SnSe) 纳米片中的高电导率和Seebeck系数. 通过局部状态跳转运输增强了这些无序材料的热电特性.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

未使用的锡化物 (SnSe) 纳米片表现出异常高的电导率和Seebeck系数趋势与温度.
传统的博尔兹曼理论未能准确地建模这些多孔和无序的SnSe样本的运输特性.

研究的目的:

从理论上研究SnSe纳米片中观察到的热电性质背后的基础物理.
开发一个模型,解释电导率和Seebeck系数在无序SnSe中的温度依赖.

主要方法:

利用基于透理论的强度障碍模型.
通过在局部状态之间跳跃来研究电荷和能量传输.
分析了烧结温度对混乱和跳跃率的影响.

主要成果:

强度障碍模型成功地解释了电导率 (σ) 和Seebeck系数 (S) 的观察到的温度依赖.
较高的烧结温度导致减少混乱 (σ_DOS) 和增加跳跃率 (1/τ0).
计算的参数 (σ_DOS = 0.044 eV,1/τ0 = 2.023 × 10^15 s−1 在703 K) 证实跳跃运输是主要的机制.

结论:

通过局部状态跳转运输是控制这些SnSe纳米片中的电荷运输的主要机制.
无序的多晶材料,如SnSe纳米片,可以通过跳跃运输表现出增强的热电特性.
这些发现为优化纳米结构材料的热电性能提供了洞察力.

关键词:

塞贝克系数是什么意思在SnSe纳米片中.电导率电导率电导率电导率跳跃运输是跳跃的运输.局部化国家局部化国家透的透是一种透.

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