基于GaN的高电子流动性晶体管结构的扫描电容显微镜:一本实用指南

相关实验视频

Updated: Jul 17, 2025

Scanning-probe Single-electron Capacitance Spectroscopy

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

Chen Chen¹, Saptarsi Ghosh¹, Francesca Adams¹

¹Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, United Kingdom.

Ultramicroscopy

|September 4, 2023

概括

优化扫描电容显微镜 (SCM) 基于化 (GaN) 的高电子流动性晶体管 (HEMT) 需要特定的尖端和双交流/直流偏差. 这增强了纳米级电气性质的表征.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
纳米技术纳米技术

背景情况:

扫描电容显微镜 (SCM) 提供纳米级分辨率,用于描述电气性质.
基于化 (GaN) 的高电子流动性晶体管 (HEMT) 结构对于先进的电子技术至关重要.
为这些结构优化SCM需要仔细考虑实验设置和成像条件.

研究的目的:

调查和优化SCM的实验设置.
确定最佳的成像条件,以增强AlGaN/GaN异构结构中的SCM对比度.
改进基于GaN的HEMT中局部电气性质的表征.

主要方法:

采用了利的,导电性钻石涂层的尖端,具有大弹常数,可稳定地进行尖端-样本接触.
将SCM尖端放置在样品边缘和欧米接触点附近.
应用了AC和DC偏差,通过分析局部DC/dV-V曲线来确定最佳DC偏差值.

主要成果:

具有导电性钻石涂层和大弹常数的尖端 (半径≤25nm) 是必要的.
需要双重交流和直流偏差应用,以耗尽二维电子气体 (2DEG).
优化的直流偏差值产生强烈的,相反的SCM对比度,而交流偏差的影响最小.

结论:

该研究为基于GaN的HEMT提供了优化的SCM方法.
这些发现使得纳米尺度电性特征的表征得到了增强.
该方法可能适用于其他HEMT结构和高度合样本.

关键词:

高电子流动性的晶体管结构.规划视图表征的表征计划视图表的表征扫描电容显微镜扫描电容显微镜

更多相关视频

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

相关概念视频

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

Scanning Electron Microscopy

Scanning Electron Microscopy

A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
Fundamental Principles
Accelerated...