Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOS Capacitor01:25

MOS Capacitor

833
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
833
Scanning Electron Microscopy01:07

Scanning Electron Microscopy

4.3K
A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
Fundamental Principles
Accelerated...
4.3K

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

[Kinase-Glo luminescent kinase assay for in vitro determination of PKA activity].

Xi bao yu fen zi mian yi xue za zhi = Chinese journal of cellular and molecular immunology·2012
Same author

Functional characterization of an arrestin gene on insecticide resistance of Culex pipiens pallens.

Parasites & vectors·2012
Same author

MiR-23a inhibits myogenic differentiation through down regulation of fast myosin heavy chain isoforms.

Experimental cell research·2012
Same author

Let-7b inhibits human cancer phenotype by targeting cytochrome P450 epoxygenase 2J2.

PloS one·2012
Same author

Role of IKK/NF-κB signaling in extinction of conditioned place aversion memory in rats.

PloS one·2012
Same author

Inhibition of poly(ADP-ribose) polymerase attenuates acute kidney injury in sodium taurocholate-induced acute pancreatitis in rats.

Pancreas·2012

相关实验视频

Updated: Jul 17, 2025

Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

13.1K

基于GaN的高电子流动性晶体管结构的扫描电容显微镜:一本实用指南.

Chen Chen1, Saptarsi Ghosh1, Francesca Adams1

  • 1Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, United Kingdom.

Ultramicroscopy
|September 4, 2023
PubMed
概括

优化扫描电容显微镜 (SCM) 基于化 (GaN) 的高电子流动性晶体管 (HEMT) 需要特定的尖端和双交流/直流偏差. 这增强了纳米级电气性质的表征.

关键词:
高电子流动性的晶体管结构.规划视图表征的表征 计划视图表的表征扫描电容显微镜扫描电容显微镜

更多相关视频

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.5K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.7K

相关实验视频

Last Updated: Jul 17, 2025

Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

13.1K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.5K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.7K

科学领域:

  • 材料科学 材料科学 材料科学
  • 电气工程 电气工程
  • 纳米技术 纳米技术

背景情况:

  • 扫描电容显微镜 (SCM) 提供纳米级分辨率,用于描述电气性质.
  • 基于化 (GaN) 的高电子流动性晶体管 (HEMT) 结构对于先进的电子技术至关重要.
  • 为这些结构优化SCM需要仔细考虑实验设置和成像条件.

研究的目的:

  • 调查和优化SCM的实验设置.
  • 确定最佳的成像条件,以增强AlGaN/GaN异构结构中的SCM对比度.
  • 改进基于GaN的HEMT中局部电气性质的表征.

主要方法:

  • 采用了利的,导电性钻石涂层的尖端,具有大弹常数,可稳定地进行尖端-样本接触.
  • 将SCM尖端放置在样品边缘和欧米接触点附近.
  • 应用了AC和DC偏差,通过分析局部DC/dV-V曲线来确定最佳DC偏差值.

主要成果:

  • 具有导电性钻石涂层和大弹常数的尖端 (半径≤25nm) 是必要的.
  • 需要双重交流和直流偏差应用,以耗尽二维电子气体 (2DEG).
  • 优化的直流偏差值产生强烈的,相反的SCM对比度,而交流偏差的影响最小.

结论:

  • 该研究为基于GaN的HEMT提供了优化的SCM方法.
  • 这些发现使得纳米尺度电性特征的表征得到了增强.
  • 该方法可能适用于其他HEMT结构和高度合样本.