范德瓦尔斯铁磁铁/半导体连接处的大型和可调节的磁电阻
Wenkai Zhu1,2, Yingmei Zhu3, Tong Zhou4
1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China.
Nature communications
|September 4, 2023
概括
原子薄的范德瓦尔斯 (vdW) 材料使新的磁道连接 (MTJs) 能够实现创纪录的道磁阻 (TMR). 这一突破使用半导体间隔器,为先进的自旋电子设备提供可调节的特性.
科学领域:
- 这就是Spintronics.
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 磁道连接 (MTJs) 对于自旋电子非常重要,通常使用散装铁磁铁和隔离间隔器.
- 传统的MTJ在材料集成和性能提升方面存在局限性.
- 原子薄的范德瓦尔斯 (vdW) 材料为下一代自旋电子设备提供了一个新的平台.
研究的目的:
- 探索所有vdW异构结构在高性能MTJ中的潜力.
- 调查使用VDW半导体作为MTJ中的间隔器.
- 为了在VDW MTJ中展示可调节的磁电阻特性.
主要方法:
- 制造Fe3GeTe2 / GaSe / Fe3GeTe2异构结构. 制造Fe3GeTe2 / GaSe / Fe3GeTe2异构结构. 制造Fe3GeTe2 / GaSe / Fe3GeTe2异构结构. 制造Fe3GeTe2 / GaSe / Fe3GeTe2异构结构.
- 磁道交叉点属性的表征.
- 在低温下测量道磁阻 (TMR).
主要成果:
- 在所有vdW MTJs中,在10K时实现了192%的创纪录TMR.
- 使用VDW半导体 (GaSe) 作为间隔器,证明了高的TMR.
- 展示了可调节的TMR大小与半导体厚度以及与偏移电压的信号反转.
结论:
- 原子薄的VDW材料为先进的MTJ提供了一个多功能平台.
- 在VDW MTJ中的半导体间隔器提供了独特的调整性和对自旋极化载体的控制.
- 这种方法为具有增强功能的新型自旋电子传感器和内存设备铺平了道路.
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