提高基于ZnO的透明薄膜晶体管的电性能,使用MgO门介电器,具有不同度的氧气
1Department of Electrophysics, National Chiayi University, No. 300 Syuefu Rd., Chiayi City 60004, Taiwan.
Nanotechnology
|September 5, 2023
概括
这项研究表明,在氧化物 (MgO) 门氧化物中增加氧化物 (ZnO) 薄膜晶体管 (TFT) 的氧气度,可显著降低工作电压并提高性能. 优化氧气水平使低压操作成为透明显示应用的关键.
科学领域:
- 材料科学 材料科学 材料科学
- 电子工程 电子工程
- 半导体物理 半导体物理
背景情况:
- 基于氧化 (ZnO) 的薄膜晶体管 (TFT) 对透明显示器具有前景,为基于的设备提供了替代方案.
- 氧化 (MgO) 具有宽带间隙和高介电常数,使其适用于门氧化物层来降低TFT工作电压.
- MgO的电特性和介电常数对氧含量,特别是氧空缺很敏感.
研究的目的:
- 为了研究磁铁喷射MgO门氧化物时不同氧度对ZnO TFT性能的影响.
- 为了优化MgO门氧化物组成,降低运行电压和改善ZnO TFTs的电气特性.
主要方法:
- 用磁铁喷射沉积的MgO门氧化物层制造ZnO TFT.
- 在MgO沉积过程中氧度的系统变化 (0%,66%和100%).
- TFT电气性能的表征,包括工作电压,值电压,陷状态密度和场效应移动性.
主要成果:
- 将氧气度从0%提高到100%提高了MgO结晶性,并将介电常数从6.53增加到12.9.
- 使用100%氧气的TFT显示显著降低了断电压 (2V) 和值电压 (-31.4V),使得低电压操作成为可能.
- 场效应的移动性随氧度而变化,在66%的氧气下降,在100%的氧气下增加到1.88cm2/Vs,这是由于介电性质的改善.
结论:
- 在MgO门氧化物中优化氧气度对于提高ZnO TFT性能至关重要.
- 在MgO中高氧度 (100%) 导致更好的晶度,更高的介电常数,并使低工作电压TFTs.
- 这项研究强调了氧气控制的MgO作为高级透明电子应用的门介电体的潜力.
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