Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOS Capacitor01:25

MOS Capacitor

833
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
833
Ferromagnetism01:31

Ferromagnetism

2.4K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.4K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

378
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
378
MOSFET01:16

MOSFET

512
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
512
Motional Emf01:22

Motional Emf

3.3K
Magnetic flux depends on three factors: the strength of the magnetic field, the area through which the field lines pass, and the field's orientation with respect to the surface area. If any of these quantities vary, a corresponding variation in magnetic flux occurs. If the area through which the magnetic field lines are passing changes, then the magnetic flux also changes. This change in the area can be of two types: the flux through the rectangular loop increases as it moves into the...
3.3K
Magnetic Field due to Moving Charges01:23

Magnetic Field due to Moving Charges

8.8K
A stationary charge creates and interacts with the electric field, while a moving charge creates a magnetic field.
Consider a point charge moving with a constant velocity. Like the electric field, the magnetic field at any point is directly proportional to the magnitude of the charge and inversely proportional to the square of the distance between the source point and the field point. However, unlike the electric field, the magnetic field is always perpendicular to the plane containing the line...
8.8K

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

A lesion-derived brain network of somatic symptoms for transdiagnostic individual application.

BMC medicine·2026
Same author

A 44-min periodic radio transient in a supernova remnant.

Science bulletin·2026
Same author

Controlling the Subpicosecond Coherent Spin and Valley Dynamics with Anomalous Magnetic Proximity Effect.

Physical review letters·2026
Same author

Effect of individualized high-definition Transcranial alternating current stimulation for suicidal ideation in depression: A randomized clinical trial.

Brain stimulation·2026
Same author

Fibroblast Mitochondrial Ca2+ Overload Drives Skin Fibrosis via mtDNA Leakage and cGAS-STING Activation in Systemic Sclerosis.

Arthritis & rheumatology (Hoboken, N.J.)·2026
Same author

Curcumin maintains pseudorabies virus latent infection by inhibiting the phosphorylation level of EGFR protein.

Veterinary microbiology·2026
Same journal

Intimate encapsulation of non-planar electrodes via a viscoplastic interlayer.

National science review·2026
Same journal

The emerging Antarctic amplification.

National science review·2026
Same journal

Reconstructing vegetation biomass in the Middle Jurassic Yanliao Biota from insect fossil assemblages.

National science review·2026
Same journal

Industrial electrocatalytic C-C coupling reaction of C<sub>1</sub> liquid molecules for efficient ethanol synthesis.

National science review·2026
Same journal

Intrinsic auxetic piezoelectricity in bulk ferroelectrics.

National science review·2026
Same journal

Electrochemical in-biosensing computing.

National science review·2026
查看所有相关文章

相关实验视频

Updated: Jul 17, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K

电动功能-可切换的磁域-墙体内存

Yu Sheng1, Weiyang Wang1,2, Yongcheng Deng1

  • 1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

National science review
|September 6, 2023
PubMed
概括
此摘要是机器生成的。

研究人员开发了可切换的磁域墙内存,可以从可重写到只读. 这项创新通过防止改来保护用户数据,提供多功能数据安全解决方案.

关键词:
这就是SOT-MRAMAM.信息安全信息安全.磁域墙 - - 磁域墙 - - 磁界墙旋转轨道旋转矩旋转电子技术 (spintronics) 是一个

更多相关视频

Gradient Echo Quantum Memory in Warm Atomic Vapor
10:00

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

12.9K
Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains
07:42

Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains

Published on: July 20, 2022

2.8K

相关实验视频

Last Updated: Jul 17, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K
Gradient Echo Quantum Memory in Warm Atomic Vapor
10:00

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

12.9K
Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains
07:42

Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains

Published on: July 20, 2022

2.8K

科学领域:

  • 这就是Spintronics.
  • 材料科学 材料科学 材料科学
  • 数据存储数据存储数据存储

背景情况:

  • 多功能内存对于在数字时代保护用户信息至关重要.
  • 需要位级可切换内存,在可重写和只读模式之间进行过渡,以防止数据改.
  • 现有的内存技术缺乏这种必不可少的可切换安全功能.

研究的目的:

  • 展示一种具有从可重写到只读的位级可切换功能的新型内存设备.
  • 为最终用户提供对数据安全的增强控制,并防止未经授权的修改.
  • 探索域墙内存在多功能旋转电子应用中的潜力.

主要方法:

  • 使用不对称的Pt/Co/Ru/AlOx异构结构制造U形域墙内存.
  • 利用强大的Dzyaloshinskii-Moriya相互作用来实现记忆功能.
  • 在Si/SiO2基板上应用电流脉冲来切换内存状态和晶圆尺度集成.

主要成果:

  • 使用当前脉冲,证明了可重写内存的转换为只读状态.
  • 成功制造了晶圆尺度可切换的磁域墙内存阵列.
  • 根据用户要求,在可重写或只读状态下确认位级存储.

结论:

  • 开发的域墙内存为保护个人机密数据提供了一个实用的解决方案.
  • 这项技术使多功能自旋电子设备具有可适应的安全功能.
  • 这些发现为先进的数据保护和多功能内存应用铺平了道路.