MoSi2N4

Yumei Zhang1, Shunhong Dong1, Pachaiyappan Murugan1

  • 1Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China liuzhiyong@ynnu.edu.cn 220001@ynnu.edu.cn hongen.wang@outlook.com.

RSC advances
|September 6, 2023
PubMed
概括

聚二氧化二氧化 (MoSi2N4) 单层的化有效调整其电子和光学性能. 这种表面功能化方法增强了光吸收,为先进的电子和光电子应用提供了潜力.

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