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添加的纳米晶膜的电子特性

Dan Shan^1,2, Menglong Wang², Daoyuan Sun²

¹School of Information Engineering, Yangzhou Polytechnic Institute, Yangzhou, 225127, China.

|September 7, 2023

概括

兴奋剂通过减少缺陷来增强纳米晶膜的电性能,从而改善了霍尔的移动性. 这项研究研究了这些兴奋剂膜中的载体运输机制.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
固态物理固态物理

背景情况:

纳米晶 (GeNCs) 是电子应用的有希望的材料.
了解兴奋剂对其电子性能的影响对于设备优化至关重要.

研究的目的:

调查 (B) 兴奋剂对GENC薄膜电子性能和微观结构特性的影响.
分析B-doped GeNC膜中的载体运输机制.

主要方法:

使用等离子体增强化学蒸汽沉积 (PECVD) 制备B化GeNC薄膜.
准备好的薄膜进行热处理.
微观结构性质的表征.
测量和分析电子属性,包括大厅移动性和温度依赖的移动性.

主要成果:

兴奋剂在GeNC膜中显著提高了Hall的移动性,最高达到200cm2/V.
增强的移动性归因于减少表面缺陷状态.
取决于温度的移动性测量显示了B兴奋剂使用前和后的明显趋势,表明载体运输发生了变化.

结论:

兴奋剂是一种有效的策略,可以提高GeNC片的电子性能.
减少表面缺陷在提高载体移动性方面发挥着关键作用.
对散射机制的进一步调查提供了对被兴奋的GeNC中载体运输的见解.

关键词:

电子财产是电子财产.德国纳米晶的纳米晶体散射机制是一种分散机制.温度依赖霍尔效应测量

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