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在Pisum sativum中培养的金属耐受性和Cd植物去除能力在的营养溶液中生长

Edith Cruzado-Tafur¹, Aleksandra Orzoł², Adrian Gołębiowski^2,3

¹Department of Plant Physiology, Genetics and Biotechnology, University of Warmia and Mazury in Olsztyn, Oczapowskiego 1a, 10-719, Olsztyn, Poland.

Journal of plant research

|September 7, 2023

概括

(Cd) 压力会损害豆植物,在根部积聚并增加氧化压力. (Si) 补充剂减轻了这些影响,减少了Pisum sativum L.中的Cd吸收和氧化损伤.

科学领域:

环境毒理学环境毒理学
植物生理学植物生理学
农业科学农业科学

背景情况:

(Cd) 是一种有毒的重金属污染物.
压力对植物生长和生理过程产生负面影响.
已知 (Si) 可以增强植物的抗压能力.

研究的目的:

为了研究Cd压力对豆植物 (Pisum sativum L.) 的影响.
确定补充 (Si) 在减轻Cd毒性的作用.
评估Cd生物积累,转移和生理压力指标.

主要方法:

在pH值为6.0和5.0的豆类植物的水培培养.
暴露于 (Cd) 应激,有或没有 (Si) 补充.
在根和芽中测量Cd含量,转位因子,总含量 (TPC),多氧化酶 (PPO) 活性,甲 (MDA) 和脂质过氧化 (LP).

主要成果:

主要积聚在豆根中,在较低的pH值 (5.0) 中度更高.
豆植物的Cd转位因子低于1.0,被归类为Cd排除者.
日常压力显著增加了氧化应激标志物 (TPC,PPO,MDA,LP).
补充剂有效地减少了根和芽中的Cd积累,降低了氧化应激标志物,并改善了植物生理状态.

结论:

豆植物对压力敏感,主要在根部积累.
补充剂提供了一种保护策略,可以防止对豆植物的毒性.
Si减少了Cd的生物积累,并减轻了氧化应激,使其有利于污染土壤中的作物弹性.

关键词:

生物积累因子是生物积累因子.是的组成部分.金属的宽容度金属的宽容度物理移除能力移除能力这种植物是 Pisum sativum L. 的.转移因素是转移的因素.

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