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Updated: Jul 17, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

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一个全面的大信号,小信号和噪声模型用于IGZO薄膜晶体管电路

Ritwik Vatsyayan1, Shadi A Dayeh1

  • 1Integrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92092 USA.

IEEE transactions on electron devices
|September 8, 2023
PubMed
概括

一个新的基于物理的模型,用于无形印氧化 (a-IGZO) 薄膜晶体管 (TFT) 准确地捕获所有操作模式的设备特征. 这种验证的模型对于设计高精度生物传感电路至关重要.

关键词:
电路模型 电路模型灵活的电子产品灵活的电子产品印氧化 (IGZO) 是一种氧化.薄膜晶体管 (TFT) 的使用

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