通过循环吸附和去除1 - 中的区域选择性沉积
Josiah Yarbrough1, Stacey F Bent1,2
1Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.
The journal of physical chemistry. A
|September 8, 2023
概括
1-尼托作为一个选择性抑制剂对铜表面的原子层沉积 (ALD). 一个新的多步骤工艺使得在低温下对而不是铜进行区域选择性Al2O3ALD.
科学领域:
- 材料科学 材料科学 材料科学
- 化学工程是化学工程的重要组成部分.
- 纳米技术纳米技术
背景情况:
- 现代电子产品需要先进的制造技术.
- 原子层沉积 (ALD) 对于创建复杂的纳米结构至关重要.
- 开发选择性ALD过程对于精确的材料沉积至关重要.
研究的目的:
- 为了研究1-nitropropane作为一个小分子抑制剂 (SMI) 选择性ALD.
- 开发一种低温,区域选择性的Al2O3 ALD工艺.
- 探索使用不同的前体用于选择性ALD.
主要方法:
- 利用水接触角光度学,奥格电子光谱学和红外光谱学来描述抑制.
- 开发了一种多步骤的低温ALD过程,涉及SMI,前体和核心活性剂的连续暴露.
- 评估了四种的ALD前体:TMA,TEA,TDMAA和DMAI.
主要成果:
- 在100°C时,1-基烯选择性地形成Cu和CuO的抑制层,而不是SiO2和Ru的抑制层.
- 一个多步骤的过程在Ru上实现了区域选择性Al2O3ALD,但不是Cu.
- 高选择性 (98.7%与TEA, 97.4%与DMAI) 已被证明,长达70个周期.
结论:
- 推出了1-nitropropane作为一种新的SMI,用于在较低温度下选择性ALD.
- 开发的工艺使得精确的,区域选择性的Al2O3.3沉积成为可能.
- 这种方法对温度敏感的基板,如生物或有机材料有潜在的应用.
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