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InSe vdW半浮式门p-n连接晶体管的光电性能

Jinghui Wang1, Yipeng Wang2, Guojin Feng3

  • 1Division of Thermophysics Metrology, National Institute of Metrology, Beijing 100029, People's Republic of China.

Nanotechnology
|September 8, 2023
PubMed
概括

研究人员开发了一种新的半浮式门晶体管,使用InSe/h-BN/Gr进行内存和逻辑. 这种可调节的光电p-n连接晶体管具有高灵敏度和快速响应率,对于先进的电子应用至关重要.

关键词:
一个人的内心.电气和光学性能表现.门的电压 门的电压激光 激光 激光 激光 激光在 homojunction 的 p n 处.

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