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Updated: Jul 16, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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在垂直泄漏的缓冲区中对碳缺陷的数值模拟分析以及在表轴层上GaN的分解

Weicheng Cao1,2, Chunyan Song3,4, Hui Liao5,6

  • 1Department of Physics, College of Sciences, Shihezi University, Shihezi, 832000, China.

Scientific reports
|September 8, 2023
PubMed
概括

在上化 (GaN-on-Si) 中的碳兴奋剂通过管理泄漏电流来提高设备性能. 这项研究揭示了碳是如何形成的.

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相关概念视频

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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