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Updated: Jul 22, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

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Published on: November 1, 2013

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在h-BN上的 (Al,Ga) N基量子点异构结构,用于UV-C辐射

Aly Zaiter1, Nikita Nikitskiy1, Maud Nemoz1

  • 1Université Côte d'Azur, Centre National de la Recherche Scientifique (CNRS), Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA), 06560 Valbonne, France.

Nanomaterials (Basel, Switzerland)
|September 9, 2023
PubMed
概括

研究人员使用六角化 (h-BN) 缓冲层开发了化 (AlGaN) 量子点. 这种方法改善了深紫外辐射和热稳定性,这对于光电子设备至关重要.

关键词:
在X射线中,X射线的衍射效果是不同的.和的化化.原子力显微镜的原子力显微镜.二氧化的化物深度紫外线发射的深紫外线排放.分子光束的表达式是epitaxy.化物 化物 化物摄影光的发光效应量子点是一个量子点.宽带间隙材料的宽带间隙材料

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