具有多组件III-V:Fe磁性半导体的多层环轴异构结构
Alexey V Kudrin1, Valeri P Lesnikov1, Ruslan N Kriukov1
1Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod, Gagarin av. 23/3, 603950 Nizhny Novgorod, Russia.
Nanomaterials (Basel, Switzerland)
|September 9, 2023
概括
研究人员使用脉冲激光喷射开发了新的磁性半导体结构. 增加铁的酸含量的酸增强铁磁性,主要是通过介导的交换相互作用.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 半导体研究 半导体研究
背景情况:
- III-V半导体对于电子和光电子设备至关重要.
- 用铁等磁性元素进行兴奋剂可以引入新的磁性特性.
- 了解交换交互是设计spintronic材料的关键.
研究的目的:
- 发展和表征新的三层磁性半导体结构.
- 为了研究成分对铁磁性质的影响.
- 阐明铁磁交换相互作用的机制.
主要方法:
- 对InSb,GaSb,InAs,GaAs和Fe目标进行脉冲激光喷射.
- 在GaAs基板上沉积InAsSb:Fe,InGaSb:Fe和InSb:Fe层.
- 使用传输电子显微镜 (TEM) 和X射线光电谱 (XPS) 进行表征.
主要成果:
- 实现了高晶质的InAsSb:Fe,InGaSb:Fe和InSb:Fe层,其铁含量高达24%.
- 观察到显著的Ga扩散,形成InGaAsSb:Fe,高达20%的Ga.
- 铁磁特性随着InAsSb:Fe.As中Sb:As比率的增加而得到改善.
结论:
- 制造的结构表现出有希望的磁性半导体特性.
- Ga 扩散导致三元 InGaAsSb:Fe 化合物的形成.
- 间接的铁磁交换相互作用主要通过Sb原子发生.
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