memristors,

Sarfraz Ali1, Muhammad Abaid Ullah2, Ali Raza3

  • 1Department of Physics, Riphah International University, Lahore Campus, 13-KM Raiwand Road, Lahore 54000, Pakistan.

PubMed
概括

氧化 (CeO2) 由于其在神经形态计算中的稳定性和潜力,对电阻式随机访问记忆 (RRAM) 具有前景. 本综述详细介绍了用于高级突触应用的基于CeO2的memristor.

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