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索尔凝处理的Y₂O₃-Al₂O₃混合氧化物基电阻随机访问记忆设备

Hae-In Kim¹, Taehun Lee¹, Yoonjin Cho¹

¹School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.

Nanomaterials (Basel, Switzerland)

|September 9, 2023

概括

新的Y2O3-Al2O3混合氧化物电阻随机访问存储器 (RRAM) 设备显示出有希望的性能. 50%的Y2O3-50%的Al2O3组成为高级内存应用提供了高阻力比率和稳定的耐久性.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
纳米技术纳米技术

背景情况:

电阻随机访问存储器 (RRAM) 是一个有前途的非易失性存储器技术.
开发稳定高效的RRAM材料对于下一代电子产品至关重要.
氧化物 (Y2O3) 和氧化 (Al2O3) 的介电性质被探索.

研究的目的:

使用sol-gel处理制造和表征Y2O3-Al2O3混合氧化物RRAM设备.
为了研究Y2O3和Al2O3比例对器件性能的影响.
为了确定高性能RRAM的最佳组成.

主要方法:

盐凝加工以制造Y2O3-Al2O3混合氧化物薄膜.
在氧化/玻璃基板上制造RRAM设备.
结构,化学和电性能分析 (包括I-V特性,耐久性和保留).

主要成果:

设备表现出双极RRAM特征,没有形成阶段.
增加的Al2O3含量降低了结晶性和增加了无形相.
一个50% Y2O3-50% Al2O3 装置显示出最高的高阻力状态/低阻力状态 (HRS/LRS) 比率 (>10^4).
这种最佳组合表现出良好的耐力 (~100个周期) 和保留 (>10^4秒).

结论:

经过Sol-gel处理的Y2O3-Al2O3混合氧化物适合RRAM应用.
50%的Y2O3-50%的Al2O3成分提供了卓越的性能,包括高HRS/LRS比率和稳定性.
这些发现有助于开发具有改进特性的先进记忆器件.

关键词:

Al2O3 的使用情况.这就是Y2O3的意思.高阻力状态的高阻力状态.低电阻状态的低电阻状态电阻式随机访问存储器 sol

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