/SiN/TaN

Dongyeol Ju1, Sunghun Kim1, Sungjun Kim1

  • 1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.

PubMed
概括

这项研究介绍了一种能够实现短期和长期记忆的ITO/SiN/TaN记忆器. 这种双重记忆能力为先进的神经形态系统提供了设计灵活性.