基于SiO2的平面场发射微三极管具有不同的电极拓
Liga Avotina1, Liga Bikse2, Yuri Dekhtyar3
1Institute of Chemical Physics, University of Latvia, Jelgavas Street 1, LV-1004 Riga, Latvia.
Materials (Basel, Switzerland)
|September 9, 2023
概括
聚焦离子束 (FIB) 微三极管表现出比光刻光学 (PL) 微三极管更高的场射效. FIB制造的结果是较低的开启电压和和二氧化场排放装置的性能提高.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 纳米技术纳米技术
背景情况:
- 场发射微三极管在各种电子应用中至关重要.
- (W) 和二氧化 (SiO2) 是微电子中的关键材料.
- 优化微三极管性能需要了解材料特性和制造方法.
研究的目的:
- 为了研究和比较电场辐射微三极管的电气性能和层质量.
- 为了分析使用光刻法 (PL) 和聚焦离子束 (FIB) 技术制造的微三极管.
- 为了将材料特性与现场排放性能相关联.
主要方法:
- 制造具有平面电极几何形状的多端 (PL) 和单端 (FIB) 微三极管.
- 原子力显微镜 (AFM) 用于表面粗度分析.
- 光电辐射 (PE) 光谱用于工作功能的确定.
- X射线光电子光谱 (XPS) 用于元素组成和纯度分析.
主要成果:
- 在Ra = 3.8 ± 0.5 nm时测量了层表面粗度.
- 确定Si (4.71 eV),SiO2 (4.85 eV) 和W (4.67 eV) 的工作函数.
- XPS证实了W层的均性和不存在杂质.
- FIB微三极管的开启电压 (50 V) 比PL微三极管 (110 V) 低.
- 这两种装置都实现了0.4 nA的场射流.
结论:
- 与光电法 (PL) 相比,聚焦离子束 (FIB) 制造的效率显著提高了现场排放效率.
- 增强FIB微三极的性能归因于在阴极上的较高局部电场.
- 该研究强调了制造方法在优化电子应用中的微三极管性能方面的重要性.
更多相关视频
06:58Electrochemical Etching and Characterization of Sharp Field Emission Points for Electron Impact Ionization
Published on: July 12, 2016
9.6K
08:50Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
9.2K
相关概念视频
Field Effect Transistor
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Characteristics of MOSFET
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
MOSFET: Enhancement Mode
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
