在低温电迁移下,在Cu-Cu接头中进行再结晶和颗粒生长
Shih-Chi Yang1, Dinh-Phuc Tran1, Chih Chen1
1Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Materials (Basel, Switzerland)
|September 9, 2023
概括
在150°C的铜 (Cu) 接头中,电迁移导致了再结晶和谷物生长. 一些关节的意想不到的阻力下降与大粒生长有关,延长了它们的使用寿命.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
背景情况:
- 电迁移是金属相互连接的关键降解机制,特别是在铜 (Cu) 接头.
- 了解电迁移期间的微结构演变对于预测和提高设备可靠性至关重要.
研究的目的:
- 调查再结晶和粒度生长对Cu-Cu关节的电迁移行为的影响.
- 为了确定微观结构变化和Cu接头在长时间电迁应力下的电阻之间的关系.
主要方法:
- -接头在150°C下进行电迁移测试,时间长达9000小时.
- 进行微观结构分析,观察再结晶和谷物生长现象.
- 随着时间的推移,对电阻进行了测量,以监测关节的降解和恢复.
主要成果:
- 在9000小时的电迁移后,在所有关节中观察到再结晶和粒度生长.
- 在Cu电流线路和结合接口中形成空隙导致电阻增加.
- 一些关节在7000小时后表现出阻力下降,与显著的粒度增长和结合接口的消除相关.
结论:
- 在150°C的大粒生长可以减轻Cu-Cu接头中空隙的有害影响.
- 通过颗粒生长消除粘合接口可以延长Cu关节的电迁移寿命.
- 控制微结构演变为提高铜互连的可靠性提供了一条途径.
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