在丰富条件下的极地GaN表面:从Ab Initio计算中修订的热力学见解

Pawel Kempisty1,2, Karol Kawka1, Akira Kusaba2

  • 1Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.

PubMed
概括

这项研究在富含的条件下改善了化 (GaN) 表面的初始热力学. 它揭示了极地GaN表面上的独特的习惯性行为,影响了生长窗口的解释.

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