在 GeSn 光探测器上进行暗流分析
Soumava Ghosh1, Greg Sun2, Timothy A Morgan3
1Department of Mechanical Engineering, and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chiayi 621301, Taiwan.
Sensors (Basel, Switzerland)
|September 9, 2023
概括
-锡 (GeSn) 合金中的缺陷显著增加了暗电流,并降低了光电探测器 (PD) 的性能. 尽量减少缺陷对于GeSn PDs来说至关重要,以与现有的红外探测器竞争.
科学领域:
- 半导体物理 半导体物理
- 材料科学 材料科学 材料科学
- 光电学是指光电子产品.
背景情况:
- 第四组GeSn合金被用于红外光探测器.
- 由于生长和基质不匹配问题,GeSn的高缺陷密度阻碍了实用的设备开发.
研究的目的:
- 综合分析缺陷对GeSn p-i-n同联光检测器性能的影响.
- 为改善 GeSn 光探测器技术提供指导方针.
主要方法:
- 暗电流组件的理论建模 (扩散,生成-重组,道化).
- 缺陷密度对载体流动性,散射时间和暗电流的影响的分析.
- 对材料质量和设备结构优化的比较研究.
主要成果:
- 在GeSn中缺陷密度增加会增加暗电流并降低光探测器的检测能力.
- 与缺陷相关的暗电流在低Sn时占主导地位,而生成暗电流在高Sn度时占主导地位.
- 尽量减少缺陷对于GeSn光探测器至关重要,特别是在中长波红外应用中.
结论:
- 降低GeSn材料生长和设备处理中的缺陷密度对于高性能红外光电探测器至关重要.
- 优化材料质量和设备结构可以提高GeSn光探测器的检测能力.
- 本研究为GeSn光探测器提供了与商业红外探测器技术相比的现实评估.
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