齐曼和轨道驱动的相位转移在平面的约瑟夫森交叉点
Daniel Z Haxell1, Marco Coraiola1, Deividas Sabonis1
1IBM Research Europe-Zurich, 8803 Rüschlikon, Switzerland.
ACS nano
|September 11, 2023
概括
我们观察到因磁场而导致的InAs/AlJosephson连接点 (JJs) 的门依赖相位变化. 这些转变揭示了对相位过渡和量子计算的潜在应用的洞察力.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 量子信息科学 量子信息科学
背景情况:
- 约瑟夫森连接 (JJs) 对超导电子和量子计算至关重要.
- 了解混合JJ中的相位过渡对于设备开发至关重要.
研究的目的:
- 在平面内磁场下研究InAs/AlJJs电流相位关系中的相位变化.
- 在混合JJs中阐明Zeeman,旋转轨道和轨道效应的相互作用.
- 探索诱导相变的特征及其对设备几何学的依赖.
主要方法:
- 在门调节的InAs/AlJosephson连接处进行超电流和道谱测量.
- 在平面内磁场的应用.
- 系统地研究具有不同超导电尺寸的设备,以探测轨道效应.
主要成果:
- 观测到的依赖门的相位变化在低电场时高达0.5π,归因于Rashba旋转轨道相互作用和Zeeman合.
- 在更高的电场中发现了明显的相位转移,与切换电流最小值和超导间隙调制有关.
- 证明了这些相位过渡标志与超导电尺寸相称,突出了轨道效应的作用.
结论:
- 这项研究阐明了混合Josephson连接处基本物理效应的复杂相互作用.
- 结果提供了更深入地了解INAs/AlJs中的相位过渡.
- 这些发现有助于量子计算和超导电子学的进步.
相关概念视频
Biasing of Metal-Semiconductor Junctions
279
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
279
Metal-Semiconductor Junctions
380
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
380
Magnetic Field due to Moving Charges
8.8K
A stationary charge creates and interacts with the electric field, while a moving charge creates a magnetic field.
Consider a point charge moving with a constant velocity. Like the electric field, the magnetic field at any point is directly proportional to the magnitude of the charge and inversely proportional to the square of the distance between the source point and the field point. However, unlike the electric field, the magnetic field is always perpendicular to the plane containing the line...
Consider a point charge moving with a constant velocity. Like the electric field, the magnetic field at any point is directly proportional to the magnitude of the charge and inversely proportional to the square of the distance between the source point and the field point. However, unlike the electric field, the magnetic field is always perpendicular to the plane containing the line...
8.8K
Biasing of P-N Junction
590
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
590
Phase Transitions
19.2K
Whether solid, liquid, or gas, a substance's state depends on the order and arrangement of its particles (atoms, molecules, or ions). Particles in the solid pack closely together, generally in a pattern. The particles vibrate about their fixed positions but do not move or squeeze past their neighbors. In liquids, although the particles are closely spaced, they are randomly arranged. The position of the particles are not fixed—that is, they are free to move past their neighbors to...
19.2K
Electric Field of Parallel Conducting Plates
1.0K
Gauss' law relates the electric flux through a closed surface to the net charge enclosed by that surface. Gauss's law can be applied to find the electric field and the charge enclosed in a region depending on its charge distribution.
Consider a cross-section of a thin, infinite conducting plate having a positive charge. For such a large thin plate, as the thickness of the plate tends to zero, the positive charges lie on the plate's two large faces. Without an external electric...
Consider a cross-section of a thin, infinite conducting plate having a positive charge. For such a large thin plate, as the thickness of the plate tends to zero, the positive charges lie on the plate's two large faces. Without an external electric...
1.0K


