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用ALD培养的二维TiS金属接触器用于MoS₂场效应晶体管

Reyhaneh Mahlouji¹, Wilhelmus M M Erwin Kessels¹, Abhay A Sagade²

¹Department of Applied Physics, Eindhoven University of Technology P. O. Box 513 5600 MB Eindhoven The Netherlands r.mahlouji@tue.nl a.a.bol@tue.nl.

Nanoscale advances

|September 14, 2023

概括

用二维二硫化物 (TiS₂) 替换传统的3D金属接触器在二硫化物 (MoS₂) 场效应晶体管 (FET) 中显著提高了设备性能,使ON状态电流增加了三倍,并降低了接触电阻.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
固态物理固态物理

背景情况:

金属接触极大地影响二硫化物 (MoS) 场效应晶体管 (FET) 的性能.
接触/MoS₂接口上的肖特基屏障 (SB) 和费米水平固定 (FLP) 效应导致高接触电阻 (R_c).
二维材料提供了一种潜在的解决方案,可以克服传统三维散装金属接触器的局限性.

研究的目的:

为了研究二维金属TiS₂作为MoS₂FET的顶部接触者的有效性.
为了比较MoS₂FET与2DTiS₂接触器的电性能,与传统的Ti金属接触器相比.
了解负责性能改进的潜在机制.

主要方法:

原子层沉积 (ALD) 用于合成MoS₂通道和TiS₂接触.
具有不同TiS₂厚度的MoS₂FET的制造和电气特性.
使用2D TiS₂和3D Ti接触器的设备之间的电性能比较.
TCAD设备模拟以支持实验发现.

主要成果:

超薄 (∼1.2 nm) 2D TiS 接触器的性能优于 5 nm 3D Ti 接触器.
开启状态电流 (I_ON) 在TiS₂接触时翻了三倍,达到≤35μA μm^-1.
接触电阻 (R_c) 减少了四倍,达到5 MΩ μm.
尽管在TiS₂/MoS₂接口上存在可能更高的SB,但观察到的性能增长.

结论:

2D TiS₂是MoS₂FETs常规金属接触器的一个有希望的替代品.
性能提升归因于MoS₂中由于2D/2D接口而增加的静电兴奋剂.
ALD合成的2D TiS接口为先进的2D电子设备提供了可扩展的方法.

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