相关实验视频

Updated: Jun 2, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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基于CVD培养的过渡金属二二烯化物,扭曲双层的高通量干转和激发性质

Hibiki Naito1, Yasuyuki Makino1, Wenjin Zhang1

  • 1Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan ymiyata@tmu.ac.jp wjzhang@tmu.ac.jp.

Nanoscale advances
|September 14, 2023
PubMed
概括

这项研究介绍了使用化学蒸汽沉积 (CVD) 培养过渡金属二二化物 (TMDC) 单层的扭曲范德瓦尔斯 (vdW) 异构结构的快速干燥制造方法,从而能够有效地发现新的材料特性.

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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication08:50

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...