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基于Sb的低k因子雪崩光二极管的过度噪声测量方面的考虑

Adam A Dadey, J Andrew McArthur, Andrew H Jones

Journal of the Optical Society of America. A, Optics, image science, and vision

|September 14, 2023

概括

雪崩光二极管提供高灵敏度,但有过多的噪音. 新的基于Sb的材料,如AlInAsSb和AlGaAsSb,可以最大限度地减少这种噪声,但测量因素至关重要.

科学领域:

光电子和半导体设备
材料科学用于光检测.

背景情况:

雪崩光二极管 (APD) 为高灵敏度提供内部增益,在苛刻的应用中性能优于p-i-n光二极管.
然而,APD内部增益引入了过多的噪音,随着增益而扩大,并可能降低性能.
尽量减少多余的噪音至关重要,通常通过使用冲击电离由单一载体类型主导的材料来实现.

研究的目的:

调查影响基于Sb的新型III-V材料 (AlInAsSb和AlGaAsSb) 的过量噪声测量影响因素,这些材料表现出较低的过量噪声.
为优化测量条件提供洞察力,以准确地描述低噪音雪崩光二极管.

主要方法:

讨论影响过度噪声测量的四个关键因素:计算方法,射频频率,波长和增强计算.
分析这些因素对先进材料测量过量噪声的影响.

主要成果:

AlInAsSb和AlGaAsSb材料显示出异常低的多余噪声,特别是在III-V组合半导体家族内.
识别关键测量参数,这些参数会显著影响过度噪声因子的准确性.

结论:

基于Sb的材料为低噪音雪崩光二极管提供了一个有前途的途径.
仔细考虑测量方法对于这些高性能光电探测器的可靠表征和优化至关重要.

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