相关实验视频

Updated: Jul 16, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

56

通过氧化石墨烯可和吸收器生成载体常规单体

Chao Mei, Lina Duan, Sansan Chang

    Applied optics
    |September 14, 2023
    PubMed
    概括

    研究人员观察到光纤激光器中的超短向量单子,使用氧化石墨烯 (GO) 作为两极独立的和吸收器 (SA). 这种方法实现了显著的3dB信号噪声比 (SNR) 改进,这是矢量单子生成的新发现.

    更多相关视频

    Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities11:42

    Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

    Published on: July 24, 2015

    15.5K
    Generation and Coherent Control of Pulsed Quantum Frequency Combs06:42

    Generation and Coherent Control of Pulsed Quantum Frequency Combs

    Published on: June 8, 2018

    9.0K

    相关概念视频

    Carrier Generation and Recombination01:22

    Carrier Generation and Recombination

    Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
    This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
    Indirect generation involves an...
    615
    Van de Graaff Generator01:15

    Van de Graaff Generator

    Van de Graaff generators (or Van de Graaffs) are devices used to demonstrate high voltage due to static electricity that can also be used for research. Robert Van de Graaff first built one in 1931 (based on original suggestions by Lord Kelvin) for use in nuclear physics research.
    Van de Graaff uses both smooth and pointed surfaces, conductors, and insulators to generate large static charges and, hence, large voltages. A substantial excess charge can be deposited on the sphere because it moves...
    1.7K