相关实验视频

Updated: Aug 13, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.2K

增强的Goos-Hänchen转移在一个有缺陷的Pell半周期光子晶体中,具有单层MoS2

Xiaolei Yang, Zhuo Liao, Zhujie Chu

    Applied optics
    |September 14, 2023
    PubMed
    概括

    研究人员使用有缺陷的半周期光子晶体增强了单层二硫化物 (MoS2) 中的Goos-Hänchen (GH) 转移. 这一显著的增强促进了光电子设备 (如传感器和探测器) 的应用.

    更多相关视频

    A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics07:12

    A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

    Published on: August 28, 2018

    9.7K
    Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices11:24

    Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

    Published on: July 11, 2025

    56

    相关概念视频

    Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

    Imperfections in Crystal Structure: Stoichiometric Point Defects

    Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...