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Updated: Aug 15, 2026

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM
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Published on: June 16, 2016

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蓝色GaN微型LED的尺寸依赖侧墙缺陷效应通过光发光和光终身成像

Zhou Wang, Xinyi Shan, Shijie Zhu

    Optics letters
    |September 14, 2023
    PubMed
    概括

    化 (GaN) 微型发光二极管 (LED) 的侧墙缺陷影响效率. 这项研究揭示了mesa蚀刻如何影响重组,并使用光终身成像显微镜 (FLIM) 来可视化受缺陷影响的区域,帮助微型LED优化.

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    相关概念视频

    Biasing of P-N Junction01:16

    Biasing of P-N Junction

    The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
    In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...