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相关概念视频

MOS Capacitor01:25

MOS Capacitor

830
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
830
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

378
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
378
Non-ohmic Devices00:51

Non-ohmic Devices

1.1K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.1K
Characteristics of MOSFET01:17

Characteristics of MOSFET

416
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
416
MOSFET01:16

MOSFET

508
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
508
Biasing of FET01:22

Biasing of FET

307
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
307

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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基于氧化的设备中的多级电阻开关用于神经形态计算.

Markus Hellenbrand1, Judith MacManus-Driscoll2

  • 1Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 0FS, UK. mkhh2@cam.ac.uk.

Nano convergence
|September 14, 2023
PubMed
概括

本综述侧重于用于神经形态计算的氧化设备中的多级电阻切换. 虽然设备层面的进展还很早,但全面的网络实现显示了未来内存计算应用的前景.

科学领域:

  • 神经形态计算是一种神经形态计算.
  • 在内存计算中的计算.
  • 材料科学 材料科学 材料科学

背景情况:

  • 现有的评论提供了神经形态和内存计算的广泛覆盖.
  • 缺少关于氧化物装置的多层电阻开关的具体细节.
  • 氧化海薄膜是电阻切换的关键材料.

研究的目的:

  • 要总结最近在多级电阻切换使用氧化用于神经形态应用的进展.
  • 为了突出目前氧化物设备中连续可编程状态的早期阶段.
  • 识别开放问题并推未来的研究方向.

主要方法:

  • 对基于氧化 hafnium 的电阻切换技术近期进展的文献综述.
  • 对设备级演示和完整网络实现的分析.
  • 综合当前的挑战和未来的前景.

主要成果:

  • 对于神经形态应用的氧化电阻切换是一个活跃的研究领域.
  • 在氧化装置中,连续可编程状态仍处于早期发展阶段.
  • 现有几个完整网络实施的演示,表明进展.

结论:

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  • 在氧化中多层电阻切换领域显示出潜力,但需要进一步开发连续状态.
  • 未来的工作重点应该是提高设备功能,探索网络层面的集成.
  • 解决当前的局限性对于实现先进的神经形态和内存计算至关重要.