对具有不同活性区域的动态偏差InGaAs/InAlAs雪崩光二极管的研究
Optics express
|September 15, 2023
概括
印化/印化 (InGaAs/InAlAs) 雪崩光二极管 (APD) 的动态偏移显示了依赖频率的噪声抑制. 最佳性能随活动区域大小而变化,为激光雷达等应用程序实现显著的增益改进.
科学领域:
- 光电学是指光电子产品.
- 半导体设备 半导体设备
- 光子学 是一个光子学.
背景情况:
- 甲/甲 (InGaAs/InAlAs) 雪崩光二极管 (APD) 对于高速光学检测至关重要.
- 动态偏差技术比传统的直流偏差提供了APD性能的潜在改进.
- APD的活性区域大小可以影响其操作特性和频率响应.
研究的目的:
- 研究活性区域大小对InGaAs/InAlAs APD在动态偏差下抑制噪声和最佳运行频率的影响.
- 为了比较动态偏差与InGaAs/InAlAs APDs的直流偏差的性能.
- 评估动态偏差在提高敏感接收器应用中的APD性能方面的潜力.
主要方法:
- 对具有50微米,100微米和200微米活性面积直径的InGaAs/InAlAsAPD进行比较分析.
- 在动态偏差下测量和评估抑制噪声频率范围和最佳信号噪声比 (SNR) 频率.
- 用动态偏差与直流偏差实现的有用收益的量化.
主要成果:
- 发现抑制噪声的上限频率为2400 MHz (50 μm),1990 MHz (100 μm) 和1400 MHz (200 μm).
- 对于SNR,最优的动态偏差频率为1877 MHz (50微米),1670 MHz (100微米) 和1075 MHz (200微米).
- 通过动态偏差实现了6698.1的有用收益,显著超过DC偏差 (47.2).
结论:
- 活跃区域的大小对动态偏差下的InGaAs/InAlAs APD的噪声抑制能力和最佳运行频率具有关键影响.
- 与DC偏差相比,动态偏差在增益方面提供了相当大的性能提升.
- 这种动态偏差技术在提高激光雷达接收器的灵敏度方面表现有前途.
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