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液晶晶体的损伤值被秒硬XFEL脉冲序列辐射

Sergey Makarov, Sergey Grigoryev, Nail Inogamov

|September 15, 2023

概括

研究欧洲X射线自由电子激光器 (EuXFEL) 脉冲对化 (LiF) 晶体损伤的研究显示,随着脉冲的增加,切除值会降低. 坑深度以非线性增长,达到数百纳米.

科学领域:

材料科学材料科学材料科学
激光物理激光物理
表面科学是一门学科.

背景情况:

了解材料对强烈的超短激光脉冲的反应对于应用至关重要.
化 (LiF) 是一种广泛使用的对高能辐射敏感的光学材料.

研究的目的:

为了确定 LiF 晶体的损伤值,用连贯的 femtosecond X 射线脉冲对其进行辐射.
为了研究多个脉冲对LiF剥离和火山口形成的影响.
开发和验证LiF的材料故障模型.

主要方法:

用欧洲X射线自由电子激光器 (EuXFEL) 发出 femtosecond脉冲辐射LiF晶体.
使用各种阅读系统进行表面分析,以确定损坏区域和火山口拓.
对不同脉冲持续时间和波长的实验结果与现有文献数据进行比较.
开发和模拟一个LiF故障模型.

主要成果:

随着事件X射线脉冲的数量增加,LiF的剥离值下降.
在LiF表面形成的石坑深度随着脉冲数的非线性增加,达到几百纳米.
开发的故障模型准确地预测了在单脉冲辐射下LiF损伤.

结论:

LiF的损伤行为是脉冲数依赖的,对于多个连贯的五秒钟X射线脉冲而言,其减小了废弃值.
这项研究为超短X射线源的LiF中激光诱导的损伤机制提供了宝贵的见解.
验证的故障模型可用于预测材料性能和优化实验条件.

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